Rumors

Intel Plans to Reenter Memory Business as Strong Firm Pairs with SoftBank to Launch New Solution, Capitalizing on Chronic Shortage


Intel is now looking to capitalize on the continued demand for DRAM by partnering with a SoftBank subsidiary to launch a new “ZAM” memory technology.

Intel’s ZAM Memory Modules Now Deliver Higher Power Performance Using Innovative Interconnect & EMIB

However, with the construction of AI infrastructure at its peak this year, there has been a significant increase in the demand for DRAM, driven by the adoption of hyperscalers and chip manufacturers. And more importantly, given that memory suppliers are limited worldwide, the bottleneck of the supply chain is currently large, emphasizing the need to enter new competitors, hence Intel is reportedly taking over a new angle on the business of memory. It is said that Team Blue will work with SoftBank’s Saimemory to develop a new standard called Z-Angle Memory (ZAM).

It is reported that efforts to develop ZAM memory technology have begun under the Advanced Memory Technology (AMT) program initiated by the DoE, where Intel demonstrated the “next generation” of DRAM. Of course, SoftBank’s press release doesn’t specifically discuss how Z-Angle Memory is expected to be positioned. However, based on what we know about Intel’s DRAM bonding, ZAM may include an amazing interconnect topology routing inside the die stack rather than drilling straight down.

Standard memory architectures cannot meet the needs of artificial intelligence. The NGDB describes a completely new approach that will accelerate our migration over the next decade.

We are reimagining how DRAM is designed to fundamentally improve computer system architecture, aiming to achieve order-of-magnitude performance improvements and to integrate the establishment of industry standards.

– Intel officials on next-generation DRAM connectivity

With the “Z-Angle” method, Intel will effectively use a significant portion of the silicon area in the memory cells, allowing higher density and reducing heat resistance. Based on how DRAM integration technology can look, we can see ZAM using a combination of copper-to-copper hybrid bonding, which enables efficient inter-layer bonding and creates a “monolithic” silicon block rather than separate stacks. And since ZAM is said to be a capacitor-less design, we’ll see Intel’s EMIB used to connect the memory to the AI ​​chip.

SoftBank’s collaboration with Intel on ZAM finally allows it to own the memory stack as well, which we can see starting to work with the company’s custom ASICs, such as the Izanagi lineup, which gives the company greater control over the architecture. Although the calculations for the effective scaling of ZAM and HBM are not specified yet, the Z-Angle method provides memory with high energy efficiency and high density, ultimately allowing for high layer stacking. Here’s how HBM vs ZAM would play out:

  • 40-50% Lower Power Consumption
  • Manufacturing Made Easy by Linking Angles
  • Advanced Storage With Chip (Up to 512 GB)

This is not the first time Intel has pursued something in the DRAM segment; the company had a dedicated business in its own right, but exited in 1985 due to declining market share following competition from Japanese vendors. However, since memory has created such an important opportunity for companies, it would be interesting to see if Intel’s ZAM can make an impact, and one effective way to do that is to convince leaders like NVIDIA to integrate the technology.

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